NUMBER OF CARRIERS AND ELECTRICAL RESISTANCE OF A GRAPHENE QUANTUM DOT

Abstract

This paper presents the theoretical study of the number of charge carriers  and the electrical resistance of a graphene quantum dot system. To this end, it starts from the density of states of zero-dimensional systems, represented by the Dirac delta function, and considers the energy levels for a graphene quantum dot model subjected to a constant potential . The results show an influence of model parameters such as the magnetic length , the quantum dot size , and the Fermi energy  at . Regarding electrical resistance, it is proposed that quasiparticle conduction occurs at the quantum dot edge due to the influence of strong magnetic fields and spin-orbit coupling. This allows us to find the electric current per quantum state and, in turn, the total electric current by knowing the number of allowed quantum states in a . The electrical resistance values are in the order of , which agrees with experimental studies reported in the literature, and the dependence on the size of the dot  and the magnetic field  is also highlighted.